Details

Autor(en) / Beteiligte

• Liu, Dong-Yang
• Hao, Li-Cai
• Zhao, Wei-Kang
• Chen, Zi-Ang
• Tang, Kun
• Zhu, Shun-Ming
• Ye, Jian-Dong
• Zhang, Rong
• Zheng, You-Dou
• Gu, Shu-Lin

Titel

Effect of oxygen on regulation of properties of moderately boron-doped diamond films

Ist Teil von

• Chinese physics B, 2022-11, Vol.31 (12), p.128104-609

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Regulation of oxygen on properties of moderately boron-doped diamond films is fully investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon ratio < 5.0%), the crystal quality of diamond is improved, and a suppression effect of residual nitrogen is observed. With increasing ratio of O/C from 2.5% to 20.0%, the hole concentration is firstly increased then reduced. This change of hole concentration is also explained. Moreover, the results of Hall effect measurement with temperatures from 300 K to 825 K show that, with adding a small amount of oxygen, boron and oxygen complex structures (especially B 3 O and B 4 O) are formed and exhibit as shallow donor in diamond, which results in increase of donor concentration. With further increase of ratio of O/C, the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration (the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%). This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with oxygen. The technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration, which is applicable to electronic level of usage.