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Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction
Ist Teil von
Chemical research in Chinese universities, 2007, Vol.23 (1), p.1-4
Ort / Verlag
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Changchun 130012, P. R. China%College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China
Erscheinungsjahr
2007
Beschreibungen/Notizen
The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition (MOCVD) exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system (GADDS). This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.