Journal of materials science & technology, 2007, Vol.23 (1), p.36-38
2007
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- 980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window
- Ist Teil von
- Journal of materials science & technology, 2007, Vol.23 (1), p.36-38
- Ort / Verlag
- National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
- Erscheinungsjahr
- 2007
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- 980 nm InGaAs/GaAs separate confinement heterostructure （SCH） strained quantum well （QW） laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient. The highest CW （continuous wave） output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.