Details

Autor(en) / Beteiligte

• Heo, Jaeyeong
• Bok Kim, Sang
• Gordon, Roy G.

Titel

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Ist Teil von

• Applied physics letters, 2012-09, Vol.101 (11), p.113507

Erscheinungsjahr

2012

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 degree C. The highest field effect mobility was similar to 13 cm2/V.s with on-to-off ratios of drain current similar to 109-1010. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 degree C showed better transistor properties than those grown at 120 degree C. Channels with higher zinc to tin ratio ( similar to 3-4) also performed better than ones with lower ratios ( similar to 1-3).