Physical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (3), p.033305.1-033305.4, Article 033305
2004
Details
- Autor(en) / Beteiligte
- Titel
- Shot noise in tunneling through a single quantum dot
- Ist Teil von
- Physical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (3), p.033305.1-033305.4, Article 033305
- Ort / Verlag
- Ridge, NY: American Physical Society
- Erscheinungsjahr
- 2004
- Link zum Volltext
- Quelle
- American Physical Society [PROLA]
- Beschreibungen/Notizen
- We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as a function of bias voltage. Both effects can be linked to the scanning of the three-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1098-0121eISSN: 1550-235XDOI: 10.1103/PhysRevB.70.033305Titel-ID: cdi_swepub_primary_oai_lup_lub_lu_se_abc1a563_9095_4fcc_8e70_6b6c91a17090
- Format
- –
- Schlagworte
- Condensed Matter Physics, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Den kondenserade materiens fysik, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport in interface structures, Electronic transport in multilayers, nanoscale materials and structures, Exact sciences and technology, Fysik, Natural Sciences, Naturvetenskap, Physical Sciences, Physics, Quantum dots, Tunneling