Details

Autor(en) / Beteiligte

• Mikhaylov, A. I.
• Afanasiev, A. V.
• Ilyin, V. A.
• Luchinin, V. V.
• Reshanov, S. A.
• Krieger, M.
• Schöner, A.
• Sledziewski, T.

Titel

On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1581-1585

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A method is suggested for reducing the density of surface states at the 4 H -SiC/SiO 2 interface by the implantation of phosphorus ions into a 4 H -SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A significant decrease in the density of surface states is observed at a phosphor-ion concentration at the SiO 2 /SiC interface exceeding 10 18 cm −3 . However, together with the passivation of surface states, the introduction of phosphorus ions leads to an increase in the built-in charge in the insulator and also slightly deteriorates the reliability of the gate insulator fabricated by this technique.