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QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs／AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR—Ⅱ ELECTRICAL ASPECTS
Ist Teil von
Hong wai yu hao mi bo xue bao, 2002-12, Vol.21 (6), p.401-407
Ort / Verlag
Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Microelectronics and Nanoscience, Chalmers University of Technology, Fysikgrnd 3, S -412 96 Gothenburg, Sweden%National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Acadermy of Sciences, 500 Yutian Road, Shanghai 200083, China
Erscheinungsjahr
2002
Link zum Volltext
Quelle
EZB Electronic Journals Library
Beschreibungen/Notizen
A complete quantum mechanical model lot GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) is presented. The photocurrent was investigated by the optical transition (absorption coefficient) between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter-diffusion of the Al atoms across the GaAs/AlGaAs heterointerfaces, the mobility of the drift-diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically. (Author)