Details

Autor(en) / Beteiligte

• Fälth, J.F.
• Gurusinghe, M.N.
• Liu, X.Y.
• Andersson, T.G.
• Ivanov, I.G.
• Monemar, B.
• Yao, H.H.
• Wang, S.C.

Titel

Influence of dislocation density on photoluminescence intensity of GaN

Ist Teil von

• Journal of crystal growth, 2005-05, Vol.278 (1), p.406-410

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2005

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5×10 8 to 3×10 10 cm −2. Carrier concentration was measured by capacitance–voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5×10 8–1×10 10 cm −2, and carrier concentrations 4×10 16–1×10 18 cm −3.