Details

Autor(en) / Beteiligte

• Gholamrezaie, Fatemeh
• Andringa, Anne-Marije
• Roelofs, W. S. Christian
• Neuhold, Alfred
• Kemerink, Martijn
• Blom, Paul W. M.
• de Leeuw, Dago M.

Titel

Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Ist Teil von

• Small (Weinheim an der Bergstrasse, Germany), 2012-01, Vol.8 (2), p.241-245

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2012

Link zum Volltext

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• The threshold voltage is an important property of organic field‐effect transistors. By applying a self‐assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.