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Enhancing Si3N4 Waveguide Nonlinearity with Heterogeneous Integration of Few-Layer WS2
Ist Teil von
ACS photonics, 2021-09, Vol.8 (9), p.2713-2721
Ort / Verlag
American Chemical Society
Erscheinungsjahr
2021
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The heterogeneous integration of low-dimensional materials with photonic waveguides has spurred wide research interest. Here, we report on the experimental investigation and the numerical modeling of enhanced nonlinear pulse broadening in silicon nitride waveguides with the heterogeneous integration of few-layer WS2. After transferring a few-layer WS2 flake of ∼14.8 μm length, the pulse spectral broadening in a dispersion-engineered silicon nitride waveguide has been enhanced by ∼48.8% in bandwidth. Through numerical modeling, an effective nonlinear coefficient higher than 600 m–1 W‑1 has been retrieved for the heterogeneous waveguide indicating an enhancement factor of larger than 300 with respect to the pristine waveguide at a wavelength of 800 nm. With further advances in two-dimensional material fabrication and integration techniques, on-chip heterostructures will offer another degree of freedom for waveguide engineering, enabling high-performance nonlinear optical devices, such as frequency combs and quantum light sources.