Details

Autor(en) / Beteiligte

• Kobayashi, M.
• Ishida, Y.
• Hwang, J. I.
• Song, G. S.
• Takizawa, M.
• Fujimori, A.
• Takeda, Y.
• Ohkochi, T.
• Okane, T.
• Saitoh, Y.
• Yamagami, H.
• Gupta, Amita
• Cao, Hongtao
• Rao, K. Venkat

Titel

Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In2-xVxO3

Ist Teil von

• Physical review. B, Condensed matter and materials physics, 2009-05, Vol.79 (20), p.205203

Erscheinungsjahr

2009

Link zum Volltext

Quelle

PROLA - Physical Review Online Archive

Beschreibungen/Notizen

• The electronic structure of In2-xVxO3 (x=0.08) has been investigated by photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The V 2p core-level photoemission and XAS spectra revealed that the V ion is in the trivalent state, which is the same valence state as that of In in In2O3. The V 3d partial density of states obtained by the resonant photoemission technique showed a sharp peak above the O 2p band. While the O 1s XAS spectrum of In2-xVxO3 was similar to that of In2O3, there were differences in the In 3p and 3d XAS spectra between the V-doped and pure In2O3. The observations give clear evidence for hybridization between the In-derived conduction band and the V 3d orbitals in In2-xVxO3.