Details

Autor(en) / Beteiligte

• Fenning, D. P.
• Hofstetter, J.
• Bertoni, M. I.
• Hudelson, S.
• Rinio, M.
• Lelièvre, J. F.
• Lai, B.
• del Cañizo, C.
• Buonassisi, T.

Titel

Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling

Ist Teil von

• Applied physics letters, 2011-04, Vol.98 (16), p.162103-162103-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2011

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content, specifically ingot border material. Postdiffusion low-temperature annealing is not found to alter appreciably the size or spatial distribution of FeSi 2 precipitates, although cell efficiency improves due to a decrease in iron interstitial concentration. Gettering simulations successfully model experiment results and suggest the efficacy of high- and low-temperature processing to reduce both precipitated and interstitial iron concentrations, respectively.