Details

Autor(en) / Beteiligte

• Kovtyukhova, N.I.
• Gorbyk, Petr Petrovych
• Shpak, Anatoliy Petrovych

Titel

Design and Assembly of High-Aspect-Ratio Silica-Encapsulated Nanostructures for Nanoelectronics Applications

Ist Teil von

• Nanomaterials and Supramolecular Structures, p.329-345

Ort / Verlag

Dordrecht: Springer Netherlands

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This chapter summarizes our progress in design and assembly of new metal nanowire-based insulated interconnects and coaxially gated in-wire thin film transistors with the electrical characteristics closely approaching those of established large-scale planar thin film devices. Our approach relies on combining templated synthesis of nanostructures with wet successive adsorption techniques and electroplating. The strong advantages of this approach are (i) a possibility to easily incorporate various electronic materials into a single nanostructure, (ii) control of the device geometric parameters with sub-nanometer precision, and (iii) using low-energy-cost and environmentally friendly synthetic methods.