Details

Autor(en) / Beteiligte

• Gautam, Rajni
• Saxena, Manoj
• Gupta, R. S.
• Gupta, Mridula

Titel

Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET with Interface Fixed Charges

Ist Teil von

• Trends in Network and Communications, p.476-485

Ort / Verlag

Berlin, Heidelberg: Springer Berlin Heidelberg

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The paper presents a simulation study of effect of interface fixed charges on the performance of the nanoscale cylindrical surrounding gate (SRG)MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier induced fixed charges at the semiconductor-oxide interface of the nanoscale cylindrical surrounding gate (SRG) MOSFET. Also the circuit reliability issues of the device are discussed in terms of the performance degradation due to interface fixed interface charges and the performance has been compared for the three materials.