Details

Autor(en) / Beteiligte

• Gilmer, David C.
• Bersuker, Gennadi
• Nemanich, Robert
• Goodnick, Stephen M
• Korkin, Anatoli
• Goodnick, Stephen M.

Titel

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

Ist Teil von

• Semiconductor Nanotechnology, 2018, p.71-92

Ort / Verlag

Switzerland: Springer International Publishing AG

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive filament formed through the metal-oxide material. The oxygen interstitial ion and vacancy profile resulting from the filament formation process establishes the initial structural properties controlling subsequent reset/set resistance switching operations. The microscopic description of these processes links the device electrical and material characteristics allowing for optimized material compositional profiles to improve device performance characteristics.