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Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)
Ist Teil von
Semiconductor Nanotechnology, 2018, p.71-92
Ort / Verlag
Switzerland: Springer International Publishing AG
Erscheinungsjahr
2018
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive filament formed through the metal-oxide material. The oxygen interstitial ion and vacancy profile resulting from the filament formation process establishes the initial structural properties controlling subsequent reset/set resistance switching operations. The microscopic description of these processes links the device electrical and material characteristics allowing for optimized material compositional profiles to improve device performance characteristics.