Details

Autor(en) / Beteiligte

• Kamiya, Toshio
• Hosono, Hideo
• Chen, Janglin
• Fihn, Mark
• Cranton, Wayne

Titel

Oxide TFTs

Ist Teil von

• Handbook of Visual Display Technology, p.1111-1144

Ort / Verlag

Cham: Springer International Publishing

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Research on oxide semiconductor has advanced significantly in the last decade. In particular, transparent amorphous oxide semiconductor (TAOS) was proposed as a novel class of amorphous semiconductors having large electron mobility comparable to those in the corresponding crystals. Since the application of TAOS to an active layer in thin-film transistors (TFTs) was reported in late 2004, extensive research on application of TAOS TFT, in particular In–Ga–Zn–O (IGZO)-based TAOS, to the backplanes of state-of-the-art flat-panel displays has been performed, and many displays driven by oxide backplanes have been commercialized. This chapter first gives a review on the history and present status of oxide semiconductors, then explains the unique nature of TAOS and advantages of TAOS over other semiconductors, and finally describes the fabrication process and condition suitable for TAOS TFTs.