Details

Autor(en) / Beteiligte

• Ishino, M.
• Dinh, T.-H.
• Hasegawa, N.
• Sakaue, K.
• Higashiguchi, T.
• Ichimaru, S.
• Hatayama, M.
• Washio, M.
• Nishikino, M.
• Kawachi, T.

Titel

EUV Laser Irradiation System with Intensity Monitor

Ist Teil von

• X-Ray Lasers 2018, p.61-66

Ort / Verlag

Cham: Springer International Publishing

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have developed an extreme ultraviolet (EUV) laser irradiation system at QST. EUV laser has a wavelength of 13.9 nm, and this laser wavelength is close to the wavelength of EUV lithography (λ = 13.5 nm). The irradiation system has an intensity monitor based on the Mo/Si multilayer beam splitter. This intensity monitor provides the irradiation energy onto the sample surface. So it is possible to examine and confirm damage/ablation thresholds of optical elements and doses for the sensitivity of resist materials, which have the same specifications of those in the EUV lithography.