Details

Autor(en) / Beteiligte

• Sycheva, Anastasia A.
• Voronina, Ekaterina N.
• Rakhimova, Tatyana V.
• Rakhimov, Alexander T.

Titel

Argon clustering in silicon under low-energy irradiation: Molecular dynamics simulation with different Ar–Si potentials

Ist Teil von

• Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-11, Vol.36 (6)

Erscheinungsjahr

2018

Quelle

American Institute of Physics

Beschreibungen/Notizen

• In this paper, the authors carried out a molecular dynamics simulation of crystal and amorphous silicon sputtering by low-energy (200 eV) Ar ions at normal incidence. The gradual damage of silicon caused by the ion bombardment was taken into account in order to study the dynamics of argon accumulation and clustering. For describing interatomic Ar–Si interaction, they used three different potentials: two binary screened Coulomb potentials (Molière and Ziegler–Biersack–Littmark) and the potential developed on the basis of density functional theory. The obtained results demonstrated the substantial influence of the chosen Ar–Si potential on calculated sputtering yields and on the processes of argon accumulation and clustering.