Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Growth of carbon nanotube bundle arrays on silicon surfaces
Ist Teil von
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-07, Vol.24 (4), p.1318-1322
Ort / Verlag
American Vacuum Society
Erscheinungsjahr
2006
Link zum Volltext
Quelle
AIP Journals Complete
Beschreibungen/Notizen
The growth on silicon substrates of arrayed bundles of multiwalled carbon nanotubes (CNTs) by metal catalyzed chemical vapor deposition of carbon from ethylene has been characterized and optimized. We find that, while CNTs can grow on bare Si substrates, the growth is substantially more reproducible if a thin
(
∼
3
nm
)
barrier layer of aluminum oxide is used between the Si surface and iron catalyst. Optimum Fe thickness and growth temperature are 3.0 nm and 650 °C, respectively. We find that the CNT length increases linearly with time at a rate of
3
–
4
μ
m
∕
min
for up to 2 h of CNT growth, after which the growth ceases. The length of the resulting CNT can thus be controlled up to a maximum length of
∼
500
μ
m
. Such control over CNT bundle length will be crucial in the incorporation of these bundle arrays into high-intensity electron field emission devices.