Details

Autor(en) / Beteiligte

• Khalili, Adrien
• Cavallo, Mariarosa
• Dang, Tung Huu
• Dabard, Corentin
• Zhang, Huichen
• Bossavit, Erwan
• Abadie, Claire
• Prado, Yoann
• Xu, Xiang Zhen
• Ithurria, Sandrine
• Vincent, Grégory
• Coinon, Christophe
• Desplanque, Ludovic
• Lhuillier, Emmanuel

Titel

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II–VI nanocrystals

Ist Teil von

• The Journal of chemical physics, 2023-03, Vol.158 (9), p.094702-094702

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2023

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 108 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.