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Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II–VI nanocrystals
Ist Teil von
The Journal of chemical physics, 2023-03, Vol.158 (9), p.094702-094702
Ort / Verlag
United States: American Institute of Physics
Erscheinungsjahr
2023
Quelle
AIP Journals Complete
Beschreibungen/Notizen
Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 108 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.