Details

Autor(en) / Beteiligte

• Wang, Ling
• Katayama, Tsukasa
• Wang, Chaoyue
• Li, Qin
• Shi, Yun
• Fang, Yuqiang
• Huang, Fuqiang
• Zhu, Yinghao
• Li, Hai-feng
• Yasui, Shintaro
• Huang, Xintang
• Yu, Jianding

Titel

Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping

Ist Teil von

• AIP advances, 2022-06, Vol.12 (6), p.065015-065015-5

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2022

Quelle

Free E-Journal (出版社公開部分のみ）

Beschreibungen/Notizen

• GaFeO3-type oxides are promising multiferroic materials due to the coexistence of spontaneous magnetization and ferroelectric polarization properties at room temperature. As these ferroic properties feature a large anisotropy, single crystals are required. However, the magnetization of GaFeO3-type single crystals remains low at room temperature. In this study, we largely enhanced the magnetization at room temperature of GaFeO3-type single crystals by increasing the Fe content and co-doping Sc3+ and Al3+. Single crystals of AlxSc0.1−xGa0.6Fe1.3O3 (x = 0.01–0.04) were prepared using the optical floating-zone method. The single crystals were rod-shaped, with a diameter and length of ∼6 mm and 7 cm, respectively. X-ray diffraction measurements confirmed the ferroelectric polarization of the crystals. In addition, they exhibited room-temperature ferrimagnetism, with Curie temperature in the range of 326–338 K; the crystals exhibit magnetic anisotropy along the a-axis. The magnetization of the single crystal at 300 K and 0.3 kOe was 13 emu g−1, which is over ten times larger than those of previously reported single crystals with GaFeO3-type crystal structure.