Details

Autor(en) / Beteiligte

• Bathen, M. E.
• Lew, C. T.-K.
• Woerle, J.
• Dorfer, C.
• Grossner, U.
• Castelletto, S.
• Johnson, B. C.

Titel

Characterization methods for defects and devices in silicon carbide

Ist Teil von

• Journal of applied physics, 2022-04, Vol.131 (14)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2022

Quelle

American Institute of Physics

Beschreibungen/Notizen

• Significant progress has been achieved with silicon carbide (SiC) high power electronics and quantum technologies, both drawing upon the unique properties of this material. In this Perspective, we briefly review some of the main defect characterization techniques that have enabled breakthroughs in these fields. We consider how key data have been collected, interpreted, and used to enhance the application of SiC. Although these fields largely rely on separate techniques, they have similar aims for the material quality and we identify ways in which the electronics and quantum technology fields can further interact for mutual benefit.