Details

Autor(en) / Beteiligte

• Yang, Fang
• Wang, Ridong
• Zhao, Weiwei
• Jiang, Jie
• Wei, Xin
• Zheng, Ting
• Yang, Yutian
• Wang, Xinwei
• Lu, Junpeng
• Ni, Zhenhua

Titel

Thermal transport and energy dissipation in two-dimensional Bi2O2Se

Ist Teil von

• Applied physics letters, 2019-11, Vol.115 (19)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2019

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• Thermal transport and energy dissipation are important for a material in both thermoelectric and electronic devices. Here, we investigate the lateral and interfacial thermal transport of two-dimensional (2D) Bi2O2Se by Raman spectroscopy. It is found that thin Bi2O2Se flakes have a low in-plane thermal conductivity while maintaining an appropriate interfacial thermal conductance. The in-plane thermal conductivity of Bi2O2Se decreases with decreasing thickness, to as low as 0.92 ± 0.18 W⋅m−1⋅K−1 at a thickness of ∼8 nm. Such a low thermal conductivity is derived from the low phonon group velocity, strong anharmonicity, and large surface scattering of acoustic phonons of the Bi2O2Se thin layer. Simultaneously, thinner Bi2O2Se presents a higher thermal dissipation to the substrate than the thicker counterparts in the device. The interfacial thermal conductance increases with decreasing thickness, and reaches ∼21 MW⋅m−2⋅K−1 at ∼8 nm. These results provide critical information for the design of thermoelectric devices with high figures of merit and electronics with low-power consumption based on 2D materials.