Details

Autor(en) / Beteiligte

• Sakamoto, Masumi
• Kobayashi, Atsushi
• Fukai, Yoshino K.
• Ueno, Kohei
• Tokumoto, Yuki
• Fujioka, Hiroshi

Titel

Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Ist Teil von

• Journal of applied physics, 2019-08, Vol.126 (7)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2019

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• Herein, polycrystalline InN films with flat surfaces and improved electron mobility were grown atop AlN orientation layers on glass substrates by pulsed sputtering deposition. X-ray diffraction and transmission electron microscopy revealed that the InN films comprise dense c-axis-oriented grains. The electron mobilities of these c-axis-oriented InN films were higher than those of the InN directly grown on the glass substrate, reaching as high as 427 cm2 V−1 s−1. To demonstrate a practical application of the developed InN film, a thin-film transistor was fabricated on a 5-nm-thick c-axis-oriented InN film on an AlN orientation layer and operated successfully with a field-effect mobility of 60 cm2 V−1 s−1.