Details

Autor(en) / Beteiligte

• Gao, Hantian
• Muralidharan, Shreyas
• Pronin, Nicholas
• Karim, Md Rezaul
• White, Susan M.
• Asel, Thaddeus
• Foster, Geoffrey
• Krishnamoorthy, Sriram
• Rajan, Siddharth
• Cao, Lei R.
• Higashiwaki, Masataka
• von Wenckstern, Holger
• Grundmann, Marius
• Zhao, Hongping
• Look, David C.
• Brillson, Leonard J.

Titel

Optical signatures of deep level defects in Ga2O3

Ist Teil von

• Applied physics letters, 2018-06, Vol.112 (24)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2018

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the β-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.