Details

Autor(en) / Beteiligte

• Bennett, S. P.
• Baldwin, J. W.
• Staruch, M.
• Matis, B. R.
• LaComb, J.
• van 't Erve, O. M. J
• Bussmann, K.
• Metzler, M.
• Gottron, N.
• Zappone, W.
• LaComb, R.
• Finkel, P.

Titel

Magnetic field response of doubly clamped magnetoelectric microelectromechanical AlN-FeCo resonators

Ist Teil von

• Applied physics letters, 2017-12, Vol.111 (25)

Erscheinungsjahr

2017

Quelle

American Institute of Physics

Beschreibungen/Notizen

• Magnetoelectric (ME) cantilever resonators have been successfully employed as magnetic sensors to measure low magnetic fields; however, high relative resolution enabling magnetometry in high magnetic fields is lacking. Here, we present on-chip silicon based ME microelectromechanical (MEMS) doubly clamped resonators which can be utilized as high sensitivity, low power magnetic sensors. The resonator is a fully suspended thin film ME heterostructure composed of an active magnetoelastic layer (Fe0.3Co0.7), which is strain coupled to a piezoelectric signal/excitation layer (AlN). By controlling uniaxial stress arising from the large magnetoelastic properties of magnetostrictive FeCo, a magnetically driven shift of the resonance frequency of the first fundamental flexural mode is observed. The theoretical intrinsic magnetic noise floor of such sensors reaches a minimum value of 35 p T / H z . This approach shows a magnetic field sensitivity of ∼5 Hz/mT in a bias magnetic field of up to 120 mT. Such sensors have the potential in applications required for enhanced dynamic sensitivity in high-field magnetometry.