Details

Autor(en) / Beteiligte

• Dhyani, Veerendra
• Dwivedi, Priyanka
• Dhanekar, Saakshi
• Das, Samaresh

Titel

High performance broadband photodetector based on MoS2/porous silicon heterojunction

Ist Teil von

• Applied physics letters, 2017-11, Vol.111 (19)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2017

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• A high speed efficient broadband photodetector based on a vertical n-MoS2/p-porous silicon heterostructure has been demonstrated. Large area MoS2 on electrochemical etched porous silicon was grown by sulphurization of a sputtered MoO3 thin film. A maximum responsivity of 9 A/W (550–850 nm) with a very high detectivity of ∼1014 Jones is observed. Transient measurements show a fast response time of ∼9 μs and is competent to work at high frequencies (∼50 kHz). The enhanced photodetection performance of the heterojunction made on porous silicon over that made on planar silicon is explained in terms of higher interfacial barrier height, superior light trapping property, and larger junction area in the MoS2/porous silicon junction.