Details

Autor(en) / Beteiligte

• Zhou, Hong
• Maize, Kerry
• Qiu, Gang
• Shakouri, Ali
• Ye, Peide D.

Titel

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Ist Teil von

• Applied physics letters, 2017-08, Vol.111 (9)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2017

Link zum Volltext

Quelle

American Institute of Physics

Beschreibungen/Notizen

• We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.