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Analysis of the threshold switching mechanism of a Te–SbO selector device for crosspoint nonvolatile memory applications
Ist Teil von
Applied physics letters, 2017-10, Vol.111 (18)
Ort / Verlag
Melville: American Institute of Physics
Erscheinungsjahr
2017
Link zum Volltext
Quelle
American Institute of Physics (AIP) Journals
Beschreibungen/Notizen
The threshold switching mechanism of Te–SbO thin films with a unique microstructure in which a Te nanocluster is present in the SbO matrix is analyzed. During the electro-forming process, amorphous Te filaments are formed in the Te nanocluster. However, unlike conventional Ovonic threshold switching (TS) selector devices, it has been demonstrated that the off-current flows along the filament. Numerical calculations show that the off-current is due to the trap present in the filament. We also observed changes in TS parameters through controls in the strength or volume of the filaments.