Details

Autor(en) / Beteiligte

• Lumb, M. P.
• Yakes, M. K.
• González, M.
• Bennett, M. F.
• Schmieder, K. J.
• Affouda, C. A.
• Herrera, M.
• Delgado, F. J.
• Molina, S. I.
• Walters, R. J.

Titel

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Ist Teil von

• Journal of applied physics, 2016-05, Vol.119 (19)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2016

Quelle

Scitation (American Institute of Physics)

Beschreibungen/Notizen

• In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.