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A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals
Ist Teil von
Review of scientific instruments, 2013-12, Vol.84 (12), p.123905-123905
Ort / Verlag
United States: American Institute of Physics
Erscheinungsjahr
2013
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.