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Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures
Ist Teil von
Journal of applied physics, 2011-02, Vol.109 (3), p.036102-036102-3
Ort / Verlag
American Institute of Physics
Erscheinungsjahr
2011
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick
S
28
i
- and
S
30
i
-enriched layers were measured to reconstruct three-dimensional images of
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28
i
and
S
30
i
stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.