Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb 70 Te 30 phase change material
Ist Teil von
Journal of applied physics, 2008-02, Vol.103 (4), p.043501-043501-5
Ort / Verlag
American Institute of Physics
Erscheinungsjahr
2008
Link zum Volltext
Quelle
AIP Journals Complete
Beschreibungen/Notizen
Effect of In and Ge doping in the form of
In
2
Ge
8
Sb
85
Te
5
on optical and thermal properties of eutectic
Sb
70
Te
30
alloys was investigated. Crystalline structure of
In
2
Ge
8
Sb
85
Te
5
phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of
30
ns
is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable
In
2
Ge
8
Sb
85
Te
5
phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability.