Details

Autor(en) / Beteiligte

• Schlichenmaier, C.
• Thränhardt, A.
• Meier, T.
• Koch, S. W.
• Chow, W. W.
• Hader, J.
• Moloney, J. V.

Titel

Gain and carrier losses of (GaIn)(NAs) heterostructuresin the 1300-1550 nm range

Ist Teil von

• Applied physics letters, 2005-12, Vol.87 (26), p.261109-261109-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2005

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A microscopic model is used to analyze gain and loss properties of ( GaIn ) ( NAs ) ∕ GaAs quantum wells in the 1.3 - 1.55 μ m range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm − 1 .