Details

Autor(en) / Beteiligte

• Mikulics, M.
• Marso, M.
• Javorka, P.
• Kordoš, P.
• Lüth, H.
• Kočan, M.
• Rizzi, A.
• Wu, S.
• Sobolewski, R.

Titel

Ultrafast metal-semiconductor-metal photodetectorson low-temperature-grown GaN

Ist Teil von

• Applied physics letters, 2005-05, Vol.86 (21), p.211110-211110-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2005

Link zum Volltext

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200 kV ∕ cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4 - ps -wide electrical transients using 360 - nm -wavelength and 100 - fs -duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material.