Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Understanding phase evolution of ferroelectric HfZrO thin films with AlO and YO inserted layers
Ist Teil von
Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-04, Vol.12 (14), p.535-546
Erscheinungsjahr
2024
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
This study investigates the insertion traits of the Al
2
O
3
and Y
2
O
3
insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf
0.5
Zr
0.5
O
2
(HZO) thin films grown by atomic layer deposition (ALD). The Al
2
O
3
and Y
2
O
3
ILs are located at the middle position along the HZO film. The thick Al
2
O
3
IL, above 2-3 ALD cycles, forms a continuous layer, physically separating the upper and lower regions of the film. Conversely, the thin Al
2
O
3
IL, below 2-3 ALD cycles, and all the Y
2
O
3
IL diffuse into the nearby HZO layers, making a single Al- or Y-doped HZO layer. The most crucial finding is that the diffused trivalent Al and Y ions substitute the tetravalent Hf and Zr ions, creating oxygen vacancies for charge neutrality and changing the phase evolutions. The substituted Al and Y suppress the monoclinic phase and enhance the tetragonal phase. Ultimately, the study suggests a new perspective on doped HfO
2
-based thin films, highlighting the crucial role of substitutional diffusion of dopants and charge neutrality in determining the formation of the tetragonal phase.
This study investigates the insertion traits of the Al
2
O
3
and Y
2
O
3
insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf
0.5
Zr
0.5
O
2
(HZO) thin films grown by atomic layer deposition (ALD).
Sprache
–
Identifikatoren
ISSN: 2050-7526
eISSN: 2050-7534
DOI: 10.1039/d4tc00061g
Titel-ID: cdi_rsc_primary_d4tc00061g
Format
–
Weiterführende Literatur
Empfehlungen zum selben Thema automatisch vorgeschlagen von bX