Details

Autor(en) / Beteiligte

• Shin, Jonghoon
• Seo, Haengha
• Ye, Kun Hee
• Jang, Yoon Ho
• Kwon, Dae Seon
• Lim, Junil
• Kim, Tae Kyun
• Paik, Heewon
• Song, Haewon
• Kim, Ha Ni
• Byun, Seungyong
• Shin, Seong Jae
• Kim, Kyung Do
• Lee, Yong Bin
• Lee, In Soo
• Choi, Jung-Hae
• Hwang, Cheol Seong

Titel

Understanding phase evolution of ferroelectric HfZrO thin films with AlO and YO inserted layers

Ist Teil von

• Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-04, Vol.12 (14), p.535-546

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This study investigates the insertion traits of the Al 2 O 3 and Y 2 O 3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf 0.5 Zr 0.5 O 2 (HZO) thin films grown by atomic layer deposition (ALD). The Al 2 O 3 and Y 2 O 3 ILs are located at the middle position along the HZO film. The thick Al 2 O 3 IL, above 2-3 ALD cycles, forms a continuous layer, physically separating the upper and lower regions of the film. Conversely, the thin Al 2 O 3 IL, below 2-3 ALD cycles, and all the Y 2 O 3 IL diffuse into the nearby HZO layers, making a single Al- or Y-doped HZO layer. The most crucial finding is that the diffused trivalent Al and Y ions substitute the tetravalent Hf and Zr ions, creating oxygen vacancies for charge neutrality and changing the phase evolutions. The substituted Al and Y suppress the monoclinic phase and enhance the tetragonal phase. Ultimately, the study suggests a new perspective on doped HfO 2 -based thin films, highlighting the crucial role of substitutional diffusion of dopants and charge neutrality in determining the formation of the tetragonal phase. This study investigates the insertion traits of the Al 2 O 3 and Y 2 O 3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf 0.5 Zr 0.5 O 2 (HZO) thin films grown by atomic layer deposition (ALD).