Details

Autor(en) / Beteiligte

• Ye, Haoshen
• Liu, Lisha
• Bai, Dongmei
• Zhang, G. P
• Zhang, Junting
• Wang, Jianli

Titel

Room-temperature spin valve effect in the TiCrN monolayer

Ist Teil von

• Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-09, Vol.1 (34), p.12422-12427

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The van der Waals spin valve, usually consisting of two ferromagnetic layers separated by a nonmagnetic layer, is potentially useful for low-dimensional spintronic devices. Can the spin valve effect be realized in a monolayer van der Waals material? Motivated by the recent synthesis of the MoSi 2 N 4 monolayer and WSi 2 N 4 monolayer, we investigate the spin valve effect in the TiCr 2 N 4 monolayer based on density functional theory and Boltzmann transport theory. The TiCr 2 N 4 monolayer retains a ferromagnetic ground state above room temperature, whose electrical transport property is strongly dependent on the angle of magnetization direction between the two Cr atomic layers. As the angle increases, the conductivity reduces dramatically and results in giant magnetoresistance in the TiCr 2 N 4 monolayer. The serious reduction of conductivity originates from the enlargement of the band gaps, which results in appreciable reduction of the electron group velocity and carriers near the Fermi level. The large difference in conductivity between the TiCr 2 N 4 monolayers with parallel and anti-parallel magnetization makes it an ideal candidate for spin valve devices. Our results reveal the potential opportunities of a ferromagnet with monolayer limitations for spintronics and a unique platform for exploring fundamental physics. We propose a novel intrinsic room-temperature ferromagnetic semiconductor, the TiCr 2 N 4 monolayer, which is an ideal candidate for spin valve devices.