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A spatial homojunction of titanium vacancies decorated with oxygen vacancies in TiO and its directed charge transfer
Ist Teil von
Nanoscale, 2022-09, Vol.14 (36), p.13373-13377
Erscheinungsjahr
2022
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The n-p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO
2
with a spatial n-p homojunction has been designed by decorating TiO
2
nanosheets with Ti vacancies around nanostructured TiO
2
with O vacancies. 2D
1
H TQ-SQ MAS NMR, EPR and XPS show the junction of titanium vacancies and oxygen vacancies at the interface. This spatial homojunction contributes to a significant enhancement in photoelectrochemical and photocatalytic performance, especially photocatalytic seawater splitting. Density functional theory calculations of the charge density reveal the directional n-p charge transfer path at the interface, which is proposed at the atomic-/nanoscale to clarify the generation of rational junctions. The spatial n-p homojunction provides a facile strategy for the design of high-performance semiconductors.
The spatial n-p homojunction design in TiO
2
greatly enhances its photocatalytic H
2
production performance owing to the directed charge transfer.
Sprache
–
Identifikatoren
ISSN: 2040-3364
eISSN: 2040-3372
DOI: 10.1039/d2nr03877c
Titel-ID: cdi_rsc_primary_d2nr03877c
Format
–
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