Details

Autor(en) / Beteiligte

• Dou, Yi
• Liang, Yujun
• Li, Haoran
• Xue, Yali
• Ye, Hanlin
• Han, Yongsheng

Titel

Integration of HVO nanowires and a GaN thin film for self-powered UV photodetectors

Ist Teil von

• Chemical communications (Cambridge, England), 2022-07, Vol.58 (61), p.8548-8551

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• H 2 V 3 O 8 /GaN n-n heterojunction ultraviolet photodetectors are fabricated via a facile dip-coating method. The Schottky junction between the GaN and H 2 V 3 O 8 builds a built-in electric field to achieve the self-powered phenomenon. The photodetector presents a high photocurrent (0.23 μA) and a fast response speed (less than 0.3 s) at 0 V bias and under 365 nm light illumination (24.50 mW cm −2 ). Furthermore, the photocurrent increases steadily as the light intensity increases from 0.53 to 24.50 mW cm −2 . The H 2 V 3 O 8 /GaN heterojunction holds great potential to realize high-performance hybrid PDs. A self-powered ultraviolet (UV) photodetector was successfully constructed through combining H 2 V 3 O 8 nanowires (NWs) and a GaN thin film.