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Controlling the ambipolarity of thieno-benzo-isoindigo polymer-based transistors: the balance of face-on and edge-on populations
Ist Teil von
Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (1), p.296-32
Ort / Verlag
Cambridge: Royal Society of Chemistry
Erscheinungsjahr
2020
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
In spite of its interesting 'asymmetric' polar cyclic amide structure combining the dual properties of isoindigo (IIG) and thieno-isoindigo, the recently formulated thieno-benzo-isoindigo (TBIG) has been less explored as a building block for organic electronic materials in conjugated polymers. This article introduces the results obtained on TBIG-based polymers (
PTBIG-100
,
PTBIG-75
,
PTBIG-50
, and
PTBIG-25
) having different ratios of TBIG and IIG accepting units and a bithiophene counterpart donor to highlight their fundamental characteristics in terms of the organic field-effect transistor (OFET) mobilities. Besides, an increase in the TBIG unit results in increased co-planarity, red-shifted absorption, and higher-lying highest occupied molecular orbital levels as well as higher face-on crystallite populations relative to edge-on ones. All the polymer-based OFETs exhibit ambipolar charge transport properties;
PTBIG-100
adopting a highly face-on orientation exhibits the highest hole mobility of 0.13 cm
2
V
−1
s
−1
but rather low electron mobility, while the opposite is true for
PTBIG-25
having a higher edge-on one. Besides, highly balanced hole and electron mobilities (
μ
FET,h
= 0.06 cm
2
V
−1
s
−1
and
μ
FET,e
= 0.045 cm
2
V
−1
s
−1
) are observed for
PTBIG-75
with a similar population between face-on and edge-on textures. Analysis of the electrical and structural properties in this study demonstrates that the ratio of face-on and edge-on is a key factor in not only determining the dominant polarity, but also achieving balanced ambipolarity in OFETs.
The asymmetric cyclic amide structure of thieno-benzo-isoindigo (TBIG) is introduced for the series of TBIG-based polymers, and their fundamental characteristics in terms of the organic field-effect transistor mobilities are investigated.