Details

Autor(en) / Beteiligte

• Zhuo, Ranran
• Wu, Di
• Wang, Yuange
• Wu, Enping
• Jia, Cheng
• Shi, Zhifeng
• Xu, Tingting
• Tian, Yongtao
• Li, Xinjian

Titel

A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction

Ist Teil von

• Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (41), p.1982-1986

Ort / Verlag

Cambridge: Royal Society of Chemistry

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• High-performance solar-blind photodetectors have attracted significant attention due to their great significance in military and industrial applications. In this work, a high-performance self-powered solar-blind photodetector based on a MoS 2 /β-Ga 2 O 3 heterojunction was demonstrated. The photodetector exhibits a remarkable rectifying characteristic with a rectification ratio over 10 5 and excellent solar-blind photoresponse properties with a cut-off wavelength of 260 nm and a high rejection ratio of 1.6 × 10 3 . Under light illumination of 245 nm (20.1 μW cm −2 ), the MoS 2 /β-Ga 2 O 3 heterojunction photodetector shows a responsivity of 2.05 mA W −1 and a specific detectivity of 1.21 × 10 11 Jones at zero bias voltage. Such high-performances of this photodetector are superior to other previously reported β-Ga 2 O 3 based photodetectors, and provide a guideline to design high-performance self-powered solar-blind photodetectors. High-performance self-powered solar-blind photodetector based on a MoS 2 /β-Ga 2 O 3 heterojunction was demonstrated, which exhibits excellent solar-blind photoresponse properties.