Details

Autor(en) / Beteiligte

• Kim, S.-Y
• Kim, K
• Hwang, Y. H
• Park, J
• Jang, J
• Nam, Y
• Kang, Y
• Kim, M
• Park, H. J
• Lee, Z
• Choi, J
• Kim, Y
• Jeong, S
• Bae, B.-S
• Park, J.-U

Titel

High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performanceElectronic supplementary information (ESI) available. See DOI: 10.1039/c6nr05577j

Erscheinungsjahr

2016-10

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm 2 V −1 s −1 ). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In 2 O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics. Electrohydrodynamic inkjet (e-jet) printing technology enables fabrication of high-resolution, superb performance transistors ( μ = ∼230 cm 2 V −1 s −1 ) and stretchable electronics.