Details

Autor(en) / Beteiligte

• Sharma, Pankaj
• Singh, Rohit
• Awasthi, Vishnu
• Pandey, Sushil K
• Garg, Vivek
• Mukherjee, Shaibal

Titel

Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

Ist Teil von

• RSC advances, 2015-01, Vol.5 (14), p.85523-85529

Erscheinungsjahr

2015

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W −1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements. Ga-doped ZnO based ultraviolet photodetectors (PDs) were fabricated with a metal-semiconductor-metal structure. The room-temperature operable PDs had 58 mA W −1 responsivity at zero bias with internal and external quantum efficiency values of ∼22.5 and 37.4%.