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Tuning the electrical property defect engineering of single layer MoS by oxygen plasma
Ist Teil von
Nanoscale, 2014-08, Vol.6 (17), p.133-139
Erscheinungsjahr
2014
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS
2
) can be significantly tuned from the semiconducting to the insulating regime
via
controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS
2
devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO
3
-rich disordered domains in the MoS
2
sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS
2
and other transition metal dichalcogenides.
We have demonstrated tuning of the electrical property of single layer MoS
2
from semiconducting to the insulating regime by oxygen plasma.
Sprache
Englisch
Identifikatoren
ISSN: 2040-3364
eISSN: 2040-3372
DOI: 10.1039/c4nr02142h
Titel-ID: cdi_rsc_primary_c4nr02142h
Format
–
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