Details

Autor(en) / Beteiligte

• Islam, Muhammad R
• Kang, Narae
• Bhanu, Udai
• Paudel, Hari P
• Erementchouk, Mikhail
• Tetard, Laurene
• Leuenberger, Michael N
• Khondaker, Saiful I

Titel

Tuning the electrical property defect engineering of single layer MoS by oxygen plasma

Ist Teil von

• Nanoscale, 2014-08, Vol.6 (17), p.133-139

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS 2 ) can be significantly tuned from the semiconducting to the insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS 2 devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO 3 -rich disordered domains in the MoS 2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS 2 and other transition metal dichalcogenides. We have demonstrated tuning of the electrical property of single layer MoS 2 from semiconducting to the insulating regime by oxygen plasma.