Details

Autor(en) / Beteiligte

• Santiago, Svette Reina Merden
• Caigas, Septem P
• Lin, Tzu-Neng
• Yuan, Chi-Tsu
• Shen, Ji-Lin
• Chiu, Ching-Hsueh
• Kuo, Hao-Chung

Titel

Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Ist Teil von

• RSC advances, 2018-01, Vol.8 (28), p.15399-1544

Ort / Verlag

Cambridge: Royal Society of Chemistry

Erscheinungsjahr

2018

Quelle

Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals

Beschreibungen/Notizen

• We propose a tunnel-injection structure, in which WS 2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS 2 -QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel-Kramers-Brillouin model, confirming the mechanism of the tunnel injection between WS 2 QDs and InGaN QWs. In this manuscript, an effective tunnel-injection structure, in which the WS 2 quantum dots (QDs) act as the electron injector and the InGaN quantum wells (QWs) act as the light emitters, separated by GaN barriers.