Details

Autor(en) / Beteiligte

• Han, Gang Hee
• Rodríguez-Manzo, Julio A
• Lee, Chan-Woo
• Kybert, Nicholas J
• Lerner, Mitchell B
• Qi, Zhengqing John
• Dattoli, Eric N
• Rappe, Andrew M
• Drndic, Marija
• Johnson, A. T. Charlie

Titel

Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition

Ist Teil von

• ACS nano, 2013-11, Vol.7 (11), p.10129-10138

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2013

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Graphene–boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies of the graphene–boron nitride interface were restricted to the microscopy of nanodomains. Here we report templated growth of single crystalline hexagonal boron nitride directly from the oriented edge of hexagonal graphene flakes by atmospheric pressure chemical vapor deposition, and physical property measurements that inform the design of in-plane hybrid electronics. Ribbons of boron nitride monolayer were grown from the edge of a graphene template and inherited its crystallographic orientation. The relative sharpness of the interface was tuned through control of growth conditions. Frequent tearing at the graphene–boron nitride interface was observed, so density functional theory was used to determine that the nitrogen-terminated interface was prone to instability during cool down. The electronic functionality of monolayer heterostructures was demonstrated through fabrication of field effect transistors with boron nitride as an in-plane gate dielectric.