Details

Autor(en) / Beteiligte

• Kumaresan, Yogeenth
• Pak, Yusin
• Lim, Namsoo
• Kim, Yonghun
• Park, Min-Ji
• Yoon, Sung-Min
• Youn, Hyoc-Min
• Lee, Heon
• Lee, Byoung Hun
• Jung, Gun Young

Titel

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Ist Teil von

• Scientific reports, 2016-11, Vol.6 (1), p.37764-37764, Article 37764

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2016

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm /Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 10 . Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.