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Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO 2 as electron transport layers
Ist Teil von
Optics letters, 2024-04, Vol.49 (8), p.1896
Ort / Verlag
United States
Erscheinungsjahr
2024
Link zum Volltext
Quelle
Optica Publishing Group Journals
Beschreibungen/Notizen
Next-generation display and lighting based on quantum dot light-emitting diodes (QLEDs) require a balanced electron injection of electron transport layers (ETLs). However, classical ZnO nanoparticles (NPs) as ETLs face inherent defects such as excessive electron injection and positive aging effects, urgently requiring the development of new types of ETL materials. Here, we show that high stability SnO
NPs as ETL can significantly improve the QLED performance to 100567 cd·m
luminance, 14.3% maximum external quantum efficiency, and 13.1 cd·A
maximum current efficiency using traditional device structures after optimizing the film thickness and annealing the temperature. Furthermore, experimental tests reveal that by doping Zr
ions, the size of SnO
NPs will reduce, dispersion will improve, and energy level will shift up. As expected, when using Zr-SnO
NPs as the ETL, the maximum external quantum efficiency can reach 16.6%, which is close to the state-of-the-art QLEDs based on ZnO ETL. This work opens the door for developing novel, to the best of our knowledge, type ETLs for QLEDs.
Sprache
Englisch
Identifikatoren
ISSN: 0146-9592
eISSN: 1539-4794
DOI: 10.1364/OL.521324
Titel-ID: cdi_pubmed_primary_38621033
Format
–
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