Details

Autor(en) / Beteiligte

• Zhang, Jie
• Rong, Ningning
• Xu, Peng
• Xiao, Yuchen
• Lu, Aijiang
• Song, Wenxiong
• Song, Sannian
• Song, Zhitang
• Liang, Yongcheng
• Wu, Liangcai

Titel

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb 2 Te 3

Ist Teil von

• Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (4)

Ort / Verlag

Switzerland

Erscheinungsjahr

2023

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb Te , one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stability. In this work, we investigated the effect of carbon doping on Sb Te . It was found that the FCC phase of C-doped Sb Te appeared at 200 °C and began to transform into the HEX phase at 25 °C, which is different from the previous reports where no FCC phase was observed in C-Sb Te . Based on the experimental observation and first-principles density functional theory calculation, it is found that the formation energy of FCC-Sb Te structure decreases gradually with the increase in C doping concentration. Moreover, doped C atoms tend to form C molecular clusters in sp hybridization at the grain boundary of Sb Te , which is similar to the layered structure of graphite. And after doping C atoms, the thermal stability of Sb Te is improved. We have fabricated the PCRAM device cell array of a C-Sb Te alloy, which has an operating speed of 5 ns, a high thermal stability (10-year data retention temperature 138.1 °C), a low device power consumption (0.57 pJ), a continuously adjustable resistance value, and a very low resistance drift coefficient.