Details

Autor(en) / Beteiligte

• Yoon, So-Jung
• Seong, Nak-Jin
• Choi, Kyujeong
• Shin, Woong-Chul
• Yoon, Sung-Min

Titel

Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition

Ist Teil von

• RSC advances, 2018-01, Vol.8 (44), p.2514-252

Ort / Verlag

England: Royal Society of Chemistry

Erscheinungsjahr

2018

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• Bias temperature stress stabilities of thin-film transistors (TFTs) using In-Ga-Zn-O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good characteristics with a high saturation mobility of 15.1 cm 2 V −1 s −1 and low sub-threshold swing of 0.12 V dec −1 . Excellent positive and negative bias stress stabilities were also obtained. When positive bias temperature stress (PBTS) stability was tested from 40 to 80 °C for 10 4 s, the threshold voltages ( V TH ) of the device using the 6 nm-thick IGZO channel shifted negatively, and the V TH shifts increased from −0.5 to −6.9 V with the increasing temperature. Time-dependent PBTS instabilities could be explained by a stretched-exponential equation, representing a charge-trapping mechanism. Bias temperature stress stabilities of thin-film transistors (TFTs) using In-Ga-Zn-O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).